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Journal of Fuel Cell Science and Technology | Volume 3 | Issue 3 | SPECIAL ISSUE RESEARCH PAPERS
SPECIAL ISSUE RESEARCH PAPERS

Performance Improvement of (La,Sr)MnO3 and (La,Sr)(Co,Fe)O3-Type Anode-Supported SOFCs

[+] Author and Article Information
Vincent A. C. Haanappel1

 Institute for Materials and Processes in Energy Systems, Forschungszentrum Jülich, 52425 Jülich, Germanyv.haanappel@fz-juelich.de

Josef Mertens, Andreas Mai

 Institute for Materials and Processes in Energy Systems, Forschungszentrum Jülich, 52425 Jülich, Germany

1

Corresponding author.

J. Fuel Cell Sci. Technol 3(3), 263-270 (Jan 11, 2006) (8 pages) doi:10.1115/1.2205359 History: Received November 28, 2005; Revised January 11, 2006
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Targets in the development of anode-supported or planar solid oxide fuel cells (SOFCs) are low operation temperatures, high durability, high reliability, high power density, and low production costs. During the past ten years steps have already been taken at Forschungszentrum Jülich to lower the operating temperatures while maintaining the power output. This was achieved by optimizing processing and microstructural parameters of the electrodes. This paper presents the latest results concerning performance improvement through variations of the processing route and the microstructure of La0.65Sr0.3MnO3 (LSM) and La0.58Sr0.4Co0.2Fe0.8O3−δ (LSCF)-type SOFCs. In the case of the LSM-type single cells, the following aspects relating to the electrochemical performance were investigated in more detail: (1) production of the anode substrate by tape casting versus warm pressing; (2) deposition of the anode functional layer (AFL) and electrolyte by screen printing versus vacuum slip casting; (3) use of noncalcined and non-ground YSZ for applying the cathode functional layer (CFL); and (4) sintering temperature of the CFL and cathode current collector layer (CCCL). In the case of LSCF-type cells, a systematic approach was initiated for optimizing the Ce0.8Gd0.2O2−δ (CGO) diffusion barrier layer: (1) deposition techniques of the CGO layer and (2) sintering temperature of the screen-printed CGO layer. Results have shown that certain modifications of the processing route led to a slightly lower electrochemical performance, whereas others did not affect the performance at all. Regarding LSCF-type SOFCs, a slight improvement of the performance was achieved by optimizing the sintering temperature of the CGO layer.
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References

1
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22
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23
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Figures

Grahic Jump Location
+Status of development of LSM-type single cells at Forschungszentrum Jülich (Germany)
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Status of development of LSM-type single cells at Forschungszentrum Jülich (Germany)
Figure 1

Status of development of LSM-type single cells at Forschungszentrum Jülich (Germany)

Grahic Jump Location
+Status of development of LSCF-type single cells at Forschungszentrum Jülich (Germany)
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Status of development of LSCF-type single cells at Forschungszentrum Jülich (Germany)
Figure 2

Status of development of LSCF-type single cells at Forschungszentrum Jülich (Germany)

Grahic Jump Location
+SEM micrograph of the fracture surface of an LSM-type single cell
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SEM micrograph of the fracture surface of an LSM-type single cell
Figure 3

SEM micrograph of the fracture surface of an LSM-type single cell

Grahic Jump Location
+SEM micrograph of the fracture surface of an LSCF-type single cell
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SEM micrograph of the fracture surface of an LSCF-type single cell
Figure 4

SEM micrograph of the fracture surface of an LSCF-type single cell

Grahic Jump Location
+Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (TC: tape casting; WP: warm pressing) and pre-sintering temperature of the anode substrate
View Large  |  Save Figure  |  Download Slide (.ppt)
Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (TC: tape casting; WP: warm pressing) and pre-sintering temperature of the anode substrate
Figure 5

Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (TC: tape casting; WP: warm pressing) and pre-sintering temperature of the anode substrate

Grahic Jump Location
+Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (1) AFL-EL S.P.: screen-printed AFL (calcined) and EL; (2) AFL-EL S.P.: screen-printed AFL (noncalcined) and EL
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Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (1) AFL-EL S.P.: screen-printed AFL (calcined) and EL; (2) AFL-EL S.P.: screen-printed AFL (noncalcined) and EL
Figure 6

Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (1) AFL-EL S.P.: screen-printed AFL (calcined) and EL; (2) AFL-EL S.P.: screen-printed AFL (noncalcined) and EL

Grahic Jump Location
+SEM micrographs of the fracture surface of single cells with an LSM/YSZ CFL with (a) calcined and ground YSZ (d90=0.9μm), and (b) noncalcined and nonground YSZ (d90=2.5μm). At the bottom of the micrographs the electrolyte (YSZ) is shown.
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SEM micrographs of the fracture surface of single cells with an LSM/YSZ CFL with (a) calcined and ground YSZ (d90=0.9μm), and (b) noncalcined and nonground YSZ (d90=2.5μm). At the bottom of the micrographs the electrolyte (YSZ) is shown.
Figure 7

SEM micrographs of the fracture surface of single cells with an LSM/YSZ CFL with (a) calcined and ground YSZ (d90=0.9μm), and (b) noncalcined and nonground YSZ (d90=2.5μm). At the bottom of the micrographs the electrolyte (YSZ) is shown.

Grahic Jump Location
+Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (N.M.-N.C.: noncalcined and nonground YSZ 1.: d90=1.3μm; 2.: d90=2.5μm) YSZ (CFL)
View Large  |  Save Figure  |  Download Slide (.ppt)
Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (N.M.-N.C.: noncalcined and nonground YSZ 1.: d90=1.3μm; 2.: d90=2.5μm) YSZ (CFL)
Figure 8

Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the cell type (N.M.-N.C.: noncalcined and nonground YSZ 1.: d90=1.3μm; 2.: d90=2.5μm) YSZ (CFL)

Grahic Jump Location
+Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the sintering temperature of the CFL and CCCL
View Large  |  Save Figure  |  Download Slide (.ppt)
Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the sintering temperature of the CFL and CCCL
Figure 9

Current density at 700mV of LSM-type single cells between 700°C and 900°C as a function of the sintering temperature of the CFL and CCCL

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+SEM micrographs of the fracture surface of LSCF-type single cells with various CGO diffusion barrier layers: (1) CGO powder with d50=0.2μm, (2) CGO powder with d50=0.9μm, and (3) CGO applied by reactive sputtering
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SEM micrographs of the fracture surface of LSCF-type single cells with various CGO diffusion barrier layers: (1) CGO powder with d50=0.2μm, (2) CGO powder with d50=0.9μm, and (3) CGO applied by reactive sputtering
Figure 10

SEM micrographs of the fracture surface of LSCF-type single cells with various CGO diffusion barrier layers: (1) CGO powder with d50=0.2μm, (2) CGO powder with d50=0.9μm, and (3) CGO applied by reactive sputtering

Grahic Jump Location
+Current density at 700mV of LSCF-type single cells between 650°C and 800°C as a function of the various types of CGO diffusion barrier layer
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Current density at 700mV of LSCF-type single cells between 650°C and 800°C as a function of the various types of CGO diffusion barrier layer
Figure 11

Current density at 700mV of LSCF-type single cells between 650°C and 800°C as a function of the various types of CGO diffusion barrier layer

Grahic Jump Location
+Current density at 700mV of LSCF-type single cells between 650°C and 800°C as a function of the sintering temperature of the CGO diffusion barrier layer
View Large  |  Save Figure  |  Download Slide (.ppt)
Current density at 700mV of LSCF-type single cells between 650°C and 800°C as a function of the sintering temperature of the CGO diffusion barrier layer
Figure 12

Current density at 700mV of LSCF-type single cells between 650°C and 800°C as a function of the sintering temperature of the CGO diffusion barrier layer

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