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Research Papers

Effect of Rate on Pulsed Laser Deposition of Yttria-Stabilized Zirconia Electrolyte Thin Films for SOFCs

[+] Author and Article Information
T. Mukai

Department of Chemical Engineering,
Osaka Prefecture University,
1-1 Gakuen-cho, Naka-ku,
Sakai, Osaka 599-8531, Japan
e-mail: tmukai@chemeng.osakafu-u.ac.jp

T. Fujita, S. Tsukui, M. Adachi

Department of Chemical Engineering,
Osaka Prefecture University,
1-1 Gakuen-cho, Naka-ku,
Sakai, Osaka 599-8531, Japan

K. Yoshida

Division of General Education,
Tokyo Metropolitan College of Industrial Technology,
8-17-1 Minamisennju,
Arakawa-ku, Tokyo 116-0003, Japan

K. C. Goretta

International Office,
Air Force Office of Scientific Research Arlington,
Arlington, VA 22203-1768

Contributed by the Advanced Energy Systems Division of ASME for publication in the JOURNAL OF FUEL CELL SCIENCE AND TECHNOLOGY. Manuscript received August 6, 2014; final manuscript received December 14, 2014; published online January 28, 2015. Assoc. Editor: Dr Masashi Mori.

J. Fuel Cell Sci. Technol 12(3), 031002 (Jun 01, 2015) (7 pages) Paper No: FC-14-1096; doi: 10.1115/1.4029423 History: Received August 06, 2014; Revised December 14, 2014; Online January 28, 2015

Yttria-stabilized zirconia (YSZ) thin films were deposited by pulsed laser deposition (PLD) at laser repetition frequencies of 10–50 Hz. Controlling the laser repetition frequency can achieve high deposition rate of YSZ, but high deposition rate at high laser repetition frequency can adversely affect the crystallinity of the resulting film. In the present work, X-ray diffraction (XRD) of YSZ thin films deposited at 10–50 Hz unexpectedly indicated no significant differences. Well-crystallized YSZ thin films were obtained for all laser repetition frequencies. This result may be due to a sufficient substrate temperature of 1000 K during processing. The oxide-ion conductivity of each thin film was comparable to that of bulk YSZ. Only minor differences in Y2O3 content, residual stress, grain size, and grain-boundary width were observed among the films. We concluded that similar quality YSZ thin films were obtained at all deposition frequencies. Oxide-ion conductivity was affected by the temperature at which the substrate was deposited. The YSZ thin films deposited at 900 K and 1000 K showed similar oxide-ion conductivity and films deposited at 800 K showed lower oxide-ion conductivity. This difference could perhaps be due to narrow grain-boundary width. The YSZ thin film with highest oxide-ion conductivity was fabricated at an intermediate substrate temperature of 900 K with a deposition rate of 86 nm·min−1 at 50 Hz, without additional high-temperature annealing greater than 1273 K. The YSZ growth rates were faster than the rates for other gas-phase methods such as midfrequency and DC sputtering.

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References

Steele, B. C. H., 1999, “Running on Natural Gas,” Nature, 400, pp. 619–621. [CrossRef]
Minh, N. Q., 2004, “Solid Oxide Fuel Cell Technology-Features and Applications,” Solid State Ionics, 174(1–4), pp. 271–277. [CrossRef]
Bove, R., and Ubertini, S., 2008, Modeling Solid Oxide Fuel Cells. Methods, Procedures and Techniques, Springer, New York.
de Souza, S., Visco, S. J., and de Jonghe, L. C., 1997, “Thin-Film Solid Oxide Fuel Cell With High Performance at Low Temperature,” Solid State Ionics, 98(1–2), pp. 57–61. [CrossRef]
Will, J., Mitterdorfer, A., Kleinlogel, C., Perednis, D., and Gauckler, L. J., 2000, “Fabrication of Thin Electrolytes for Second-Generation Solid Oxide Fuel Cells,” Solid State Ionics, 131(1–2), pp. 79–96. [CrossRef]
Leng, Y. J., Chan, S. H., Khor, K. A., and Jiang, S. P., 2004, “Performance Evaluation of Anode-Supported Solid Oxide Fuel Cells With Thin Film YSZ Electrolyte,” Int. J Hydrogen Energy, 29(10), pp. 1025–1033. [CrossRef]
Bieberle-Hütter, A., Beckel, D., Infortuna, A., Muecke, U. P., Rupp, J. L. M., Gauckler, L. J., Rey-Mermet, S. R., Muralt, P., Bieri, N. R., Hotz, N., Stutz, M. J., Poulikakos, D., Heeb, P., Müller, P., Bernard, A., Gmür, R., and Hocker, T., 2008, “A Micro-Solid Oxide Fuel Cell System as Battery Replacement,” J. Power Sources, 177(1), pp. 123–130. [CrossRef]
Meier, L. P., Urech, L., and Gauckler, L. J., 2004, “Tape Casting of Nanocrystalline Ceria Gadolinia Powder,” J. Eur. Ceram. Soc., 24(15–16), pp. 3753–3758. [CrossRef]
Wu, W.-C., Huang, J.-T., and Chiba, A., 2010, “Synthesis and Properties of Samaria-Doped Ceria Electrolyte for IT-SOFCs by EDTA-Citrate Complexin,” J. Power Sources, 195(18), pp. 5868–5874. [CrossRef]
Steele, B. C. H., 2000, “Appraisal of Ce1y Gdy O2y/2 Electrolytes for IT-SOFC Operation at 500 °C,” Solid State Ionics, 129(1–4), pp. 95–110. [CrossRef]
Kim, S. D., Hyun, S. H., Moon, J., Kim, J.-H., and Song, R. H., 2005, “Fabrication and Characterization of Anode-Supported Electrolyte Thin Films for Intermediate Temperature Solid Oxide Fuel Cells,” J. Power Sources, 139(1–2), pp. 67–72. [CrossRef]
Gaudon, M., Laberty-Robert, Ch., Ansart, F., and Stevens, P., 2006, “Thick YSZ Films Prepared Via a Modified Sol–Gel Route: Thickness Control (8–80 μm),” J. Eur. Ceram. Soc., 26(15), pp. 3153–3160. [CrossRef]
Otani, M., Tsukui, S., Yoshida, K., Umezaki, Y., and Mukai, T., 2010, “Fabrication of Gd0.5 Sr0.5 CoO3 Film for SOFC Cathode by Pulsed Laser Deposition,” Solid State Ionics, 180(40), pp. 1667–1671. [CrossRef]
Koep, E., Jin, C., Haluska, M., Das, R., Narayan, R., Sandhage, K., Snyder, R., and Liu, M., 2006, “Microstructure and Electrochemical Properties of Cathode Materials for SOFCs Prepared Via Pulsed Laser Deposition,” J. Power Sources, 161(1), pp. 250–255. [CrossRef]
Mukai, T., Tsukui, S., Yoshida, K., Adachi, M., and Goretta, K. C., 2013, “Influence of Thin Films Structure of Gd0.5 Sr0.5 CoO3Cathode on Impedance Spectroscopy,” ECS Trans., 57(1), pp. 1885–1891. [CrossRef]
Watanabe, T., Kuriki, R., Iwai, H., Muroga, T., Miyata, S., Ibi, A., Yamada, Y., and Shiohara, Y., 2005, “High Rate Deposition by PLD of YBCO Films for Coated Conductors,” IEEE Trans. Appl. Supercond., 15(2), pp. 2566–2569. [CrossRef]
Yamada, Y., Watanabe, T., Muroga, T., Miyata, S., Iwai, H., Ibi, A., Shiohara, Y., Katoh, T., and Hirayama, T., 2005, “Rapid Production of Buffered Substrates and Long Length Coated Conductor Development Using IBAD, PLD Methods and “Self-Epitaxial” Ceria Buffer,” IEEE Trans. Appl. Supercond., 15(2), pp. 2600–2603. [CrossRef]
Yamada, Y., Ibi, A., Fukushima, H., Kuriki, R., Miyata, S., Takahashi, K., Kobayashi, H., Ishida, S., Konishi, M., Kato, T., Hirayama, T., and Shiohara, Y., 2006, “Towards The Practical PLD-IBAD Coated Conductor Fabrication – Long Wire, High Production Rate and Jc Enhancement in a Magnetic Field,” Physica C, 445–448(), pp. 504–508. [CrossRef]
Usoskin, A., Knoke, J., Garcia-Moreno, F., Issaev, A., Dzick, J., Sievers, S., and Freyhardt, H. C., 2001, “Large-Area HTS-Coated Stainless Steel Tapes With High Critical Currents,” IEEE Trans. Appl. Supercond., 11(1), pp. 3385–3388. [CrossRef]
Mukai, T., Tsukui, S., Yoshida, K., Yamaguchi, S., Hatayama, R., Adachi, M., Ishibashi, H., Kakehi, Y., Satoh, K., Kusaka, T., and Goretta, K. C., 2013, “Fabrication of Y2O3 –Doped Zirconia/Gadolinia-Doped Ceria Bilayer Electrolyte Thin Film SOFC Cells of SOFCs by Single-Pulsed Laser Deposition Processing,” ASME J. Fuel Cell Sci. Technol., 10(6), p. 061006. [CrossRef]
Zhaoyang, W., Liyuan, S., and Lizhong, H., 2010, “Effect of Laser Repetition Frequency on the Structural and Optical Properties of ZnO Thin Films by PLD,” Vacuum, 85(3), pp. 397–399. [CrossRef]
Aoki, M., Chiang, Y.-M., Kosaki, I., Lee, L. J.-R., Tuller, H., and Liu, Y., 1996, “Solute Segregation and Grain-Boundary Impedance in High-Purity Stabilized Zirconia,” J. American Ceramic Society, 79(5), pp. 1169–1180. [CrossRef]
Trassin, M., Viart, N., Ulhaq-Bouillet, C., Versini, G., Barre, S., Leuvrey, C., and Pourroy, G., 2009, “Ultraflat Monocrystalline Pt (111) Electrodes,” J. Appl. Phys., 105(10), p. 106101. [CrossRef]
Rodrigo, K., Knudsen, J., Pryds, N., Schou, J., and Linderoth, S., 2007, “Characterization of Yttria-Stabilized Zirconia Thin Films Grown by Pulsed Laser Deposition (PLD) on Various Substrates,” Appl. Surf. Sci., 254(4), pp. 1338–1342. [CrossRef]
Gerstl, M., Navickas, E., Friedbacher, G., Kubel, F., Ahrens, M., and Fleig, J., 2011, “The Separation of Grain and Grain Boundary Impedance in Thin Yttria Stabilized Zirconia (YSZ) Layers,” Solid State Ionics, 185(1), pp. 32–41. [CrossRef]
Heiroth, S., Lippert, T., Wokaun, A., Döbeli, M., Ruppc, J. L. M., Scherrer, B., and Gauckler, L. J., 2010, “Yttria-Stabilized Zirconia Thin Films by Pulsed Laser Deposition: Microstructural and Compositional Control,” J. Eur. Ceram. Soc., 30(2), pp. 489–495. [CrossRef]
Sillassen, M., Eklund, P., Sridharan, M., Pryds, N., Bonanos, N., and Bøttiger, J., 2009, “Ionic Conductivity and Thermal Stability of Magnetron-Sputtered Nanocrystalline Yttria-Stabilized Zirconia,” J. Appl. Phys., 105(10), p. 104907. [CrossRef]
Inoue, N., Yuasa, H., and Okoshi, M., 2002, “TiO2 Thin Films Prepared by PLD for Photocatalytic Applications,” Appl. Surf. Sci., 197–198, pp. 393–397. [CrossRef]
Wakiya, N., Yoshida, M., Kiguchi, T., Shinozaki, K., and Mizutani, N., 2002, “RF-Magnetron-Sputtered Heteroepitaxial YSZ and CeO2/YSZ/Si(001) Thin Films With Improved Capacitance–Voltage Characteristics,” Thin Solid Films, 411(2), pp. 268–273. [CrossRef]
Hartmanova, M., Gmucova, K, and Thurzo, I., 2000, “Dielectric Properties of Ceria and Yttria-Stabilized Zirconia Thin Films Grown on Silicon Substrates,” Solid State Ionics, 130(1–2), pp. 105–110. [CrossRef]
Wang, H., Ji, W., Zhang, L., Gong, Y., Xie, B., Jiang, Y., and Song, Y., 2011, “Preparation of YSZ Films by Magnetron Sputtering for Anode-Supported SOFC,” Solid State Ionics, 192(1), pp. 413–418. [CrossRef]
Hill, T., and Huang, H., 2010, “Fabricating Pinhole-Free YSZ Sub-Microthin Films by Magnetron Sputtering for Micro-SOFCs,” Int. J. Electrochem., 2011, p. 479203.
Joo, J. H., and Choi, G. M., 2006, “Electrical Conductivity of YSZ Film Grown by Pulsed Laser Deposition,” Solid State Ionics, 177(11–12), pp. 1053–1057. [CrossRef]
Bellino, M. G., Lamas, D. G., and Walsöe de Reca, N. E., 2006, “Enhanced Ionic Conductivity in Nanostructured, Heavily Doped Ceria Ceramics,” Adv. Funct. Mater., 16(1), pp. 107–113. [CrossRef]
Radhakrishnan, R., Virkar, A. V., Singhal, S. C., Dunham, G. C., and Marina, O. A., 2005, “Design, Fabrication and Characterization of a Miniaturized Series-Connected Potentiometric Oxygen Sensor,” Sens. Actuators, B, 105(2), pp. 312–321. [CrossRef]
Kek, D., Panjan, P., Wanzenberg, E., and Jamnik, J., 2001, “Electrical and Microstructural Investigations of Cermet Anode/YSZ Thin Film Systems,” J. Eur. Ceram. Soc., 21(10–11), pp. 1861–1865. [CrossRef]
Fergus, J. W., 2006, “Electrolytes for Solid Oxide Fuel Cells,” J. Power Sources, 162(1), pp. 30–40. [CrossRef]
Araki, W., and Arai, Y., 2010, “Oxygen Diffusion in Yttria-Stabilized Zirconia Subjected to Uniaxial Stress,” Solid State Ionics, 181(8–10), pp. 441–446. [CrossRef]
Araki, W., Imai, Y., and Adachi, T., 2009, “Mechanical Stress Effect on Oxygen Ion Mobility in 8 mol% Yttria-Stabilized Zirconia Electrolyte,” J. Eur. Ceram. Soc., 29(11), pp. 2275–2279. [CrossRef]
M'Peko, J. C., Spavieri, D. L., Jr., Silva, C. L., Fortulan, C. A., Souza, D. P. F., and Souza, M. F., 2003, “Electrical Properties of Zirconia–Alumina Composites,” Solid State Ionics, 156(1–2), pp. 59–69. [CrossRef]
Chiang, Y.-M., Birnie, D., and Kingery, W. D., 1997, Physical Ceramics: Principles for Ceramic Science and Engineering, Wiley, New York, Chap. 2.
Guo, X., and Waser, R., 2004, “Space Charge Concept for Acceptor-Doped Zirconia and Ceria and Experimental Evidences,” Solid State Ionics, 173(1–4), pp. 63–67. [CrossRef]
Sommer, J., Herzig, C., Mayer, S., and Gust, W., 1989, “Grain Boundary Self-Diffusion in Silver Bicrystals,” Defect Diffus. Forum, 843, pp. 66–69.
Balluffi, R. W., 1982, “Grain Boundary Diffusion Mechanisms in Metals,” Metall. Mater. Trans. B, 13(4), pp. 527–553. [CrossRef]

Figures

Grahic Jump Location
Fig. 1

SEM photomicrographs of YSZ film deposited by PLD at laser repetition frequency of 50 Hz: (a) cross section and (b) surface

Grahic Jump Location
Fig. 2

Laser repetition frequency versus deposition rate of YSZ thin films

Grahic Jump Location
Fig. 3

XRD patterns of YSZ thin films deposited at laser repetition frequency shown

Grahic Jump Location
Fig. 4

Impedance measurements at 523 K for Si (100) substrate/Ti–TiOx/Pt/YSZ/Ti–TiOx/Pt samples: (a) YSZ deposited at 20 Hz and (b) YSZ deposited at 30 Hz

Grahic Jump Location
Fig. 5

Temperature dependence of oxide-ion conductivity of Si (100) substrate/Ti–TiOx–Pt/YSZ/Ti–TiOx–Pt samples with YSZ deposited at difference laser repetition frequency shown

Grahic Jump Location
Fig. 6

Temperature dependence of oxide-ion conductivity of Si (100) substrate/Ti–TiOx–Pt/YSZ/Ti–TiOx–Pt samples with YSZ deposited at substrate temperature shown

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