Research Papers

Effect of Rate on Pulsed Laser Deposition of Yttria-Stabilized Zirconia Electrolyte Thin Films for SOFCs

[+] Author and Article Information
T. Mukai

Department of Chemical Engineering,
Osaka Prefecture University,
1-1 Gakuen-cho, Naka-ku,
Sakai, Osaka 599-8531, Japan
e-mail: tmukai@chemeng.osakafu-u.ac.jp

T. Fujita, S. Tsukui, M. Adachi

Department of Chemical Engineering,
Osaka Prefecture University,
1-1 Gakuen-cho, Naka-ku,
Sakai, Osaka 599-8531, Japan

K. Yoshida

Division of General Education,
Tokyo Metropolitan College of Industrial Technology,
8-17-1 Minamisennju,
Arakawa-ku, Tokyo 116-0003, Japan

K. C. Goretta

International Office,
Air Force Office of Scientific Research Arlington,
Arlington, VA 22203-1768

Contributed by the Advanced Energy Systems Division of ASME for publication in the JOURNAL OF FUEL CELL SCIENCE AND TECHNOLOGY. Manuscript received August 6, 2014; final manuscript received December 14, 2014; published online January 28, 2015. Assoc. Editor: Dr Masashi Mori.

J. Fuel Cell Sci. Technol 12(3), 031002 (Jun 01, 2015) (7 pages) Paper No: FC-14-1096; doi: 10.1115/1.4029423 History: Received August 06, 2014; Revised December 14, 2014; Online January 28, 2015

Yttria-stabilized zirconia (YSZ) thin films were deposited by pulsed laser deposition (PLD) at laser repetition frequencies of 10–50 Hz. Controlling the laser repetition frequency can achieve high deposition rate of YSZ, but high deposition rate at high laser repetition frequency can adversely affect the crystallinity of the resulting film. In the present work, X-ray diffraction (XRD) of YSZ thin films deposited at 10–50 Hz unexpectedly indicated no significant differences. Well-crystallized YSZ thin films were obtained for all laser repetition frequencies. This result may be due to a sufficient substrate temperature of 1000 K during processing. The oxide-ion conductivity of each thin film was comparable to that of bulk YSZ. Only minor differences in Y2O3 content, residual stress, grain size, and grain-boundary width were observed among the films. We concluded that similar quality YSZ thin films were obtained at all deposition frequencies. Oxide-ion conductivity was affected by the temperature at which the substrate was deposited. The YSZ thin films deposited at 900 K and 1000 K showed similar oxide-ion conductivity and films deposited at 800 K showed lower oxide-ion conductivity. This difference could perhaps be due to narrow grain-boundary width. The YSZ thin film with highest oxide-ion conductivity was fabricated at an intermediate substrate temperature of 900 K with a deposition rate of 86 nm·min−1 at 50 Hz, without additional high-temperature annealing greater than 1273 K. The YSZ growth rates were faster than the rates for other gas-phase methods such as midfrequency and DC sputtering.

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Grahic Jump Location
Fig. 4

Impedance measurements at 523 K for Si (100) substrate/Ti–TiOx/Pt/YSZ/Ti–TiOx/Pt samples: (a) YSZ deposited at 20 Hz and (b) YSZ deposited at 30 Hz

Grahic Jump Location
Fig. 3

XRD patterns of YSZ thin films deposited at laser repetition frequency shown

Grahic Jump Location
Fig. 2

Laser repetition frequency versus deposition rate of YSZ thin films

Grahic Jump Location
Fig. 1

SEM photomicrographs of YSZ film deposited by PLD at laser repetition frequency of 50 Hz: (a) cross section and (b) surface

Grahic Jump Location
Fig. 5

Temperature dependence of oxide-ion conductivity of Si (100) substrate/Ti–TiOx–Pt/YSZ/Ti–TiOx–Pt samples with YSZ deposited at difference laser repetition frequency shown

Grahic Jump Location
Fig. 6

Temperature dependence of oxide-ion conductivity of Si (100) substrate/Ti–TiOx–Pt/YSZ/Ti–TiOx–Pt samples with YSZ deposited at substrate temperature shown



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